3N80 Datasheet, PDF (4/8 Pages) Unisonic Technologies – 2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET

SEMICONDUCTOR
Fig.5 Capacitance vs. drain-source voltage
1000
800
600
C_ISS
CISS=CGS+CGD (CDS=shorted)
COSS=CDS+CGD
CRSS=CGD
400
200
0
0
10
C_OSS
C_RSS
Notes:
1.V_GS=0V
2.f=1MHz
1
10
Drain-Source voltage, V_DS (V)
3N80 Series RRooHHSS
Nell High Power Products
Fig.6 Gate charge vs. gate-source voltage
10
VDS = 160V
VDS = 400V
VDS = 640V
5
*Note:I_D=3.0A
0
0
5
10
15
20
25 30
Total gate charge, Q_G (nC)
Fig.7 Breakdown voltage variation
vs. temperature
1.2
1.1
1
0.9
*Notes:
1.V_GS=0V
2.I_D=250µA
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
Junction temperature, T_J (°C)
Fig.9-1 Maximum safe operating area
for 3N80A
2
10
Operation in This Area is Limited by R_DS(on)
1
10
10µs
100µs
1ms
0
10
10ms
DC
-1
10
*Notes:
1.T_C=25°C
2.T_J=150°C
3.Single pulse
-2
10
1
10
2
10
3
10
Drain-source voltage, V_DS (V)
Fig.8 On-resistance vs. temperature
3
2.5
2
1.5
1
*Notes:
0.5
1.V_GS=10V
2.I_D=1.5A
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
Junction temperature, T_J (°C)
Fig.9-2 Maximum safe operating area
for 3N80AF
Operation in This Area is Limited by R_DS(on)
1
10
100µs
1ms
0
10
10ms
DC
-1
10
*Notes:
1.T_C=25°C
2.T_J=150°C
3.Single pulse
-2
10
0
1
2
3
10
10
10
10
Drain-source voltage, V_DS (V)
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