3N80 Datasheet, PDF (2/8 Pages) Unisonic Technologies – 2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET

SEMICONDUCTOR
3N80 Series RRooHHSS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
PARAMETER
R_th(j-c)
Thermal resistance, junction to case
R_th(j-a)
Thermal resistance, junction to ambient
Min.
TO-220AB
TO-220F
TO-220AB/TO-220F
Typ.
Max.
1.25
3.20
62.5
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
OFF CHARACTERISTICS
V_(BR)DSS
Drain to source breakdown voltage
I_D = 250µA ,V_GS = 0V
800
▲ ▲ ^V(BR)DSS^{/ T}J
I_DSS
Breakdown voltage temperature coefficient
Drain to source leakage current
I_D = 250µA, V_DS=V_GS
V_DS=800V, V_GS=0V
V_DS=640V, V_GS=0V
T_C = 25°C
T_C=125°C
I_GSS
Gate to source forward leakage current
Gate to source reverse leakage current
V_GS = 30V, V_DS = 0V
V_GS = -30V, V_DS = 0V
ON CHARACTERISTICS
R_DS(ON)
Static drain to source on-state resistance ID =1.5A, VGS = 10V
V_GS(TH)
Gate threshold voltage
V_GS=V_DS, I_D=250μA
2.5
g_fs
Forward transconductance (Note 1)
V_DS=50V, I_D=1.5A
DYNAMIC CHARACTERISTICS
C_ISS
C_OSS
Input capacitance
Output capacitance
V_DS = 25V, V_GS = 0V, f =1MHz
C_RSS
Reverse transfer capacitance
SWITCHING CHARACTERISTICS
t_d(ON)
t_r
t_d(OFF)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_DD = 400V, V_GS = 10V, l_D = 3A,
R_GS = 25Ω (Note 1, 2)
Q_G
Q_GS
Q_GD
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
V_DD = 640V, V_GS = 10V, I_D = 3A
(Note 1, 2)
Typ.
1.00
3.8
2.2
580
60
23
20
28
45
30
27
5
10
Max. UNIT
V
1
20
100
-100
V/ºC
μA
nA
4.5 Ω
4.5 V
S
750
75
pF
30
40
80
ns
100
75
35
nC
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
V_SD
Diode forward voltage
I_SD = 3A, V_GS = 0V
1.4
V
Is (IsD)
Continuous source to drain current
Integral reverse P-N junction
3
diode in the MOSFET D (Drain)
I_SM
Pulsed source current
t_rr
Reverse recovery time
Q_rr
Reverse recovery charge
Note: 1. Pulse test: Pulse width ≤ 250μs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
G
(Gate)
S (Source)
I_SD = 3A, V_GS = 0V,
dI_F/dt = 100A/µs
A
12
380
ns
1.6
µC
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