30ETU12 Datasheet, PDF (4/6 Pages) Nell Semiconductor Co., Ltd – Ultrafast recovery

SEMICONDUCTOR
Fig6. Dynamic parameters vs. junction temperature
1.2
1.0
trr
0.8
I_RRM
Qrr
trr
0.6
0.4
Qrr
0.2
0.0
0
25 50 75 100 125 150
Junction temperature,T_J (°C)
Fig.8 Junction capacitance vs. reverse voltage
200
180
160
140
120
100
80
60
40
20
0
1
10
100 200
reverse voltage, V_R (V)
Ordering Information Table
30ETU12 RRooHHSS
Nell High Power Products
Fig.7 Maximum average forward current
vs. case temperature
50
45
40
35
30
25
20
15
10
5
0
25 50
Duty cycle = 0.5
T_J =175°C
75 100 125 150 175
Case temperature (°C)
Device code
30 E T U 12
1
2
3
4
5
1 - Current rating (30 = 30A)
2
- Single Diode
3
- _{TO-220AB or TO-220AC Modified}
4
- _{Ultrafast Recovery}
5
- _{Voltage Rating (12 = 1200 V)}
E = 2 pins
A = 3 pins
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