30ETU12 Datasheet, PDF (3/6 Pages) Nell Semiconductor Co., Ltd – Ultrafast recovery

SEMICONDUCTOR
30ETU12 RRooHHSS
Nell High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case
vs. pulse duration
0.90
0.80
D=0.9
0.70
0.60
0.7
0.50
0.5
0.40
0.30
0.3
0.20
0.10
0
10^-5
0.05
0.1
10^-4
SINGLE PULSE
10^-3
10^-2
Note:
t1
t2
Duty Factor D =t₁/t₂
Peak T_J = P_DM xZ_θJC+T_C
10^-1
1.0
Rectangular pulse duration (seconds)
Fig.2 Forward current vs. forward voltage
200
180
160
140
120
100
80
60
40
20
0
0
T_J =175°C
TJ =125°C
T_J =25°C
TJ =-55°C
1
2
3
4
5
Anode-to-cathode voltage, V_F (V)
Fig.3 Reverse recovery time vs. current rate of change
600
T_J =125°C
V_R =800V
500
60A
400
30A
300
15A
200
100
0
0 200 400 600 800 1000 1200
Current rate of change, -di_F/dt (A/μs)
Fig.4 Reverse recovery charge vs. current rate of change Fig 5. Reverse recovery current vs. current rate of change
5000
TJ =125°C
VR =800V 60A
4000
3000
2000
1000
30A
15A
0
0 200 400 600 800 1000 1200
Current rate of change, -di_F/dt (A/μs)
35
T_J =125°C
V_R =800V
30
60A
25
30A
20
15
15A
10
5
0
0 200 400 600 800 1000 1200
Current rate of change, -di_F/dt (A/μs)
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