NST200F12 Datasheet, PDF (3/5 Pages) Nell Semiconductor Co., Ltd – Ultrafast Soft Recovery Diode, 100A × 2

SEMICONDUCTOR
NST200F12 / NST200F12-A RRooHHSS
Nell High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.45
0.40
0.9
0.35
0.7
0.30
0.25
0.5
0.20
0.15
0.3
0.10
0.1
0.05
0.05
0
10^-5
SINGLE PULSE
10^-4
10^-3
Note :
t₁
t₂
Duty Factor D =t1/t2
Peak T_J = P_DM xZ_θJC+T_C
10^-2
0.1
1
Rectangular pulse duration (seconds)
Fig.2 Forward current vs. forward voltage
300
250
200
T_J =150°C
150
100
T_J =125°C
50
0
0 0.5 1 1.5
T_J =25°C
T_J =-55°C
2 2.5 3
Anode-to-cathode voltage (V), V_F
Fig.3 Reverse recovery time vs. current rate of change
700
600
200A
T_J =125°C
T_R =800V
500
100A
400
50A
300
200
100
0
0 200 400 600 800 1000 1200
Current rate of change(A/μs), -di_F/dt
Fig.4 Reverse recovery charge vs. current rate of change
12000
10000
T_J =125°C
T_R =800V
200A
8000
100A
6000
50A
4000
2000
0
0 200 400 600 800 1000 1200
Current rate of change (A/μs), -di_F/dt
Fig 5. Reverse recovery current vs. current rate of change
80
T_J =125°C
70 ^{TR =800V}
200A
60
50
40
100A
30
20
50A
10
0
0 200 400 600 800 1000 1200
Current rate of change (A/μs), -di_F/dt
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