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NST200F12 Datasheet, PDF (2/5 Pages) Nell Semiconductor Co., Ltd – Ultrafast Soft Recovery Diode, 100A × 2
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SEMICONDUCTOR
NST200F12 / NST200F12-A RRooHHSS
Nell High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Cathode to anode
breakdown voltage
VBR
Maximum forward voltage
VFM
Maximum reverse
IRM
leakage current
Junction capacitance
CT
(TJ = 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
IR = 100 µA
1200
IF = 100 A
-
IF = 200 A
-
IF = 100 A, TJ = 125 ºC
-
VR = VR rated
-
TJ = 125°C, VR = VR rated
-
VR = 200V
TYP.
-
2.0
2.3
1.8
2
2
120
MAX. UNITS
-
2.5
V
-
-
250
µA
-
mA
pF
DYNAMIC RECOVERY CHARACTERISTICS PERLEG (TJ = 25 ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP. MAX.
Reverse recovery time
IF = 0.5A, IR = 1.0A, IRR = 250mA (RG#1 CKT)
-
trr
IF = 1.0 A, dIF/dt = -100 A/µs, VR =30 V, TJ = 25°C
-
trr1
TJ = 25 ºC
-
90
100
65
-
420
-
Reverse recovery time
Reverse recovery time
trr2
IRRM1
IRRM2
Qrr1
Qrr2
TJ = 125 ºC
TJ = 25 ºC
TJ = 125 ºC
TJ = 25 ºC
TJ = 125 ºC
IF= 100A
dIF/dt = -200 A/µs
VR =800 V
-
580
-
-
7
-
-
19
-
-
1250
-
-
5350
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS (TJ = 25 ºC unless otherwise specified)
PARAMETER
SYMBOL
MIN.
TYP.
Junction to case, single leg conducting
Junction to case, both legs conducting
RthJC
-
-
-
-
Case to sink, flat, greased surface
Weight
Mounting torque
RthCS
-
0.05
-
30
-
-
MAX.
0.3
0.15
-
-
1.1
UNITS
ºC/W
K/W
g
Nm
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