500PTCO Datasheet, PDF (3/6 Pages) Nell Semiconductor Co., Ltd – Phase Control Thyristors

SEMICONDUCTOR
500PT Series RRooHHSS
Nell High Power Products
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
SYMBOL
P_GM
P_G(AV)
I_GM
+V_GM
-V_GM
I_GT
V_GT
TEST CONDITIONS
VALUES
UNIT
TYP. MAX.
T_J = T_J maximum, t_p ≤ 5 ms
T_J = T_J maximum, f = 50 Hz, d% = 50
T_J = T_J maximum, t_p ≤ 5 ms
10
W
2
3
A
T_J = T_J maximum, t_p ≤ 5 ms
20
V
5
T_J = -40°C
T_J = 25°C
T_J = 125°C
T_J = -40°C
T_J = 25°C
200 -
100 200 mA
Maximum required gate
current/voltage are the lowest ⁵⁰
-
value which will trigger all units _2.5
-
12V anode to cathode applied
1.8 3
V
T_J = 125°C
1.1 -
Maximum gate current/
l_GD
10
mA
voltage not to trigger is the
T_J = T_J maximum maximum value which will
not trigger any unit with rated
V_GD
0.25
V
V_DRM anode to cathode applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction temperature range
T_J
Maximum storage temperature range
T_stg
Maximum thermal resistance, junction to heatsink
R_thJ-hs
Maximum thermal resistance, case to heatsink
R_thC-hs
TEST CONDITIONS
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
VALUES
-40 to 125
-40 to 150
0.11
0.05
0.011
0.006
UNIT
ºC
K/W
Mounting force, ±10%
9800
N
(1000)
(kg)
Approximate weight
Case style
250
g
TO-200AB (B-PUK), Nell’s C-type Capsule
RthJC CONDUCTION
SINUSOIDAL CONDUCTION
CONDUCTION ANGEL
SINGLE SIDE DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
TEST CONDUCTIONS
180°
120°
90°
60°
30°
0.012
0.014
0.018
0.026
0.045
0.010
0.015
0.018
0.027
0.046
0.008
0.014
0.019
0.027
0.046
0.008
0.014
0.019
0.028
0.046
T_J = T_J maximum
Note
• The table above shows the increment of thermal resistance R_thJ-hs when devices operate at different conduction angles than DC
UNITS
K/W
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