500PTCO Datasheet, PDF (2/6 Pages) Nell Semiconductor Co., Ltd – Phase Control Thyristors

SEMICONDUCTOR
500PT Series RRooHHSS
Nell High Power Products
FORWARD CONDUCTION
PARAMETER
Maximum average current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one cycle
non-reptitive surge current
Maximum l²t for fusing
Maximum l²√t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
SYMBOL
TEST CONDITIONS
VALUES UNIT
I_T(AV) ^{180° conduction, half sine wave}
double side (single side) cooled
550(275) A
55/(75)
ºC
I_T(RMS) DC at 25°C heatsink temperature double side cooled ₁₁₁₀
A
I_TSM
I²t
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100%V_RRM
reapplied
No voltage
reapplied
100%V_RRM
reapplied
Sinusoidal half wave,
initial T_J = T_J maximum
8000
8380
6730
7040
320
291
226
206
A
kA²s
I²âˆšt ^{t = 0.1 to 10 ms, no voltage reapplied}
3200 kA²âˆšs
V_T(TO)1 (16.7% x π x l_T(AV) < I < π x l_T(AV)),T_J =T_J maximum
0.97
V
V_T(TO)2 (I > π x l_T(AV)),T_J =T_J maximum
0.98
r_t1
(16.7% x π x l_T(AV) < I < π x l_T(AV)),T_J =T_J maximum
0.74
r_t2
(I > π x l_T(AV)),T_J =T_J maximum
mΩ
0.73
V_TM lpk =1635A,TJ =TJ maximum, tp = 10 ms sine pulse
2.18
V
l_H
T_J = 25°C, anode supply 12V resistive load
l_L
600
mA
1000
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
TEST CONDITIONS
dl/dt
Gate drive 20V, 20Ω, t_r ≤ 1µs
T_J =T_J maximum, anode voltage ≤ 80% V_DRM
VALUES UNIT
1000 A/µs
t_d
Gate current 1A, dl_g/dt =1 A/µs
V_d = 0.67 V_DRM, T_J = 25°C
1.0
µs
t_q
l_TM = 550A, T_J =T_J maximum, dl/dt = 40A/µs.
100
V_R = 50V, dV/dt = 20 V/µs, gate 0 V 100Ω, tp = 500µs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
TEST CONDITIONS
dV/dt TJ =TJ maximum linear to 80% rated VDRM
l_RRM,
l_DRM,
T_J =T_J maximum, rated V_DRM/V_RRM applied
VALUES UNIT
500
V/µs
50
mA
www.nellsemi.com
Page 2 of 6