2SA1941B Datasheet, PDF (3/3 Pages) Nell Semiconductor Co., Ltd – Silicon PNP triple diffusion planar transistor

SEMICONDUCTOR
Fig.1 Collector output characteristics
-10
-250
-200
Common emitter
T_C = 25°C
-150
-8
-100
-6
-50
-4
-40
-30
-2
-20
lB = -10 mA
0
0
-2
-4
-6
-8
-10
Collector emitter voltage, V_CE (V)
Fig.3 I_C-V_BE characteristics
-10
-8
-6
TC = 100°C
-4
TC = 25°C
TC = -25°C
-2
Common emitter
V_CE = -5V
0
0
-0.4
-0.8
-1.2
-1.6
-2.0
Collector current, I_C(A)
Fig.5 Safe operating area
-50
-30 _{lC max (pulsed)*}
lC max (continuous)
-10
-5
-3
DC operation
T_C = 25°C
-1
-0.5
-0.3
-0.1
* Single nonrepetitive
pulse T_C = 25°C
Curves must be derated
linearly with increase in
temperature.
-0.05
-2 -3
-10
-30
1 ms*
10 ms*
100 ms*
VCEO max
-100
-300
Collector-Emitter voltage, V_CE (V)
2SA1941B Series RRooHHSS
Nell High Power Products
Fig.2 Collector-Emitter saturation voltage
-10
-1
-0.1
-0.01
-0.01
TC = 100°C
TC = -25°C
T_C = 25°C
-0.1
-1
Common emitter
l_C/l_B =10
-10
-100
Collector current, l_C (A)
1000
Fig.4 DC current gain
100
T_C = 100°C
T_C = 25°C
TC = -25°C
10
1
-0.01
Common emitter
V_CE = -5V
-0.1
-1
-10
Collector current, l_C (A)
www.nellsemi.com
Page 3 of 3