2SA1941B Datasheet, PDF (1/3 Pages) Nell Semiconductor Co., Ltd – Silicon PNP triple diffusion planar transistor

SEMICONDUCTOR
2SA1941B Series RRooHHSS
Nell High Power Products
Silicon PNP triple diffusion planar transistor
-10A/-140V/100W
15.6±0.4
9.6
4.8±0.2
2.0±0.1
TO-3P(B)
FEATURES
High breakdown voltage, V_CEO = -140V (min)
Complementary to 2SC5198B
TO-3P package which can be installed to the
heat sink with one screw
APPLICATIONS
Suitable for use in 70W high fidelity audio
amplifier’s output stage
Φ3.2±0,1
2
3
+0.2
1.05 _-0.1
5.45±0.1
5.45±0.1
BCE
0.65
+0.2
-0.1
1.4
12 3
B
All dimensions in millimeters
C
E ^PNP
ABSOLUTE MAXIMUM RATINGS (T_a = 25°C)
SYMBOL
PARAMETER
V_CBO
Collector to base voltage
V_CEO
Collector to emitter voltage
V_EBO
Emitter to base voltage
I_CP
Peak collector current t_p ≤ 5 ms
I_C
Collector current
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS (T_C = 25°C)
SYMBOL
PARAMETER
R_th(j-c)
Thermal resistance, junction to case
VALUE
-140
-140
-5
-20
-10
-1
T_C= 25°C
100
150
-55 to 150
UNIT
V
A
W
ºC
VALUE
1.55
UNIT
ºC/W
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