N-HFA08TB60 Datasheet, PDF (2/6 Pages) Nell Semiconductor Co., Ltd – FRED Ultrafast Soft Recovery Diode, 8 A

SEMICONDUCTOR
N-HFA08TB60 ^RRooHHSS
Nell High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Cathode to anode
breakdown voltage
V_BR
Maximum forward voltage
V_FM
Maximum reverse
I_RM
leakage current
Junction capacitance
C_T
Series inductance
L_S
(T_J = 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
I_R = 100 µA
600
I_F = 8.0 A
-
I_F = 16 A
-
I_F = 8.0 A, T_J = 125 ºC
-
V_R = V_R rated
-
T_J = 125°C, V_R = V_R rated
-
V_R = 200V
-
Measured lead to lead 5 mm from package body
-
TYP.
-
1.4
1.7
1.4
0.3
100
10
8.0
MAX. UNITS
-
1.7
V
2.1
1.7
5.0
µA
500
25
pF
-
nH
DYNAMIC RECOVERY CHARACTERISTICS PERLEG (T_J = 25 ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP. MAX.
Reverse recovery time
I_F = 0.5A, I_R = 1.0A, I_RR = 250mA (RG#1 CKT)
-
t_rr
I_F = 1.0 A, dI_F/dt = -200 A/µs, V_R =30 V, T_J = 25°C
-
t_rr1
T_J = 25 ºC
-
25
-
18
-
37
55
t_rr2
T_J = 125 ºC
-
55
90
Peak recovery current
Reverse recovery charge
I_RRM1
I_RRM2
Q_rr1
Q_rr2
T_J = 25 ºC
T_J = 125 ºC
T_J = 25 ºC
T_J = 125 ºC
-
3.5
5.0
I_F= 8.0A
-
4.5
8.0
dI_F/dt = -200 A/µs
V_R = 200 V
-
65
138
-
124
360
Peak rate of fall of recovery
current during t_b
dl_(rec)M/dt1 T_J = 25 ºC
dl_(rec)M/dt2 _{TJ = 125 ºC}
-
240
-
-
210
-
UNITS
ns
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance,
junction to case
T_lead
R_thJC
0.063" from case (1.6 mm) for 10 s
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
R_thJA
R_thCS
Typical socket mount
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-220AC
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
3.5
UNITS
ºС
-
80
K/W
0.5
-
2.0
-
0.07
-
12
-
(10)
HFA08TB60
g
oz.
kgf . cm
(lbf . in)
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