MJE3055A Datasheet, PDF (2/3 Pages) Nell Semiconductor Co., Ltd – Complementary Silicon power transistors (10A / 60V / 75W)

SEMICONDUCTOR
MJE3055A(NPN)
MJE2955A(PNP) _RRooHHSS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
OFF CHARACTERISTICS
I_CEX
Collector cutoff current
V_CE = 70V, V_BE = 1.5V
V_CE = 70V, V_BE = 1.5V, T_C = 150°C
I_CEO
Collector cutoff current
I_CBO
Collector cutoff current
I_EBO
Emitter cutoff current
V_CEO(SUS)* Collector to emitter sustaining voltage
V_(BR)CBO Collector to base breakdown voltage
V_(BR)EBO Emitter to base breakdown voltage
ON CHARACTERISTICS
V_CE = 30V, l_B = 0
V_CB = 70V, l_E = 0
V_CB = 70V, l_E = 0, T_C = 150°C
V_EBO = 5V, l_C = 0
l_C = 200mA, l_B = 0
l_E = 0, l_C = 100mA
l_C = 0, l_E = 100mA
h_FE
Forward current transfer ratio (DC current gain)
V_CE(sat)* Collector to emitter saturation voltage
V_BE(on)* Base to emitter on voltage
DYNAMIC CHARACTERISTICS
l_C = 4A, V_CE = 4V
l_C = 10A, V_CE = 4V
l_C = 4A, l_B = 400mA
l_C = 10A, l_B = 3.3A
I_C = 4A, V_CE = 4V
Transition frequency (Current gain- Bandwidth
f_T
product )
l_C = 0.5A, V_CE = 10V, f = 500KHz
MIN MAX
1.0
5.0
0.7
mA
1.0
10
5.0
60
70
V
5
20
100
5
1.1
8.0
V
1.8
2.0
MHZ
Second breakdown collector current with base
l_s/b*
forward baised
*Pulsed : Pulse duration = 300 µs, duty cycle ≤ 20%.
*For PNP types voltage and current values are negative.
Fig.1 Active region safe operating area
V_CE = 40V, t = 1.0s
2.87
A
10
7.0
1.0 ms
5.0 ms
5.0
dc
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
5.0
TJ = 150°C
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
TC = 150°C
7.0 10
20
30
100 µs
50 60
There are two limitations on the power handling
ability of a transistor: average junction temperature
and second breakdown. Safe operating area curves
indicate l_C-V_CE limits of the transistor that must be
observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the
curves indicate.
The data of figure 1 is based on T_J(pk) =150°C. T_C is
variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
T_J(pk) ≤ 150°C. At high case temperatures, thermal
limitations wil l reduce the power that can be handled
to values less than the limitations imposed by second
breakdown.
Collector-emitter voltage, V_CE (V)
www.nellsemi.com
Page 2 of 3