MJE3055A Datasheet, PDF (1/3 Pages) Nell Semiconductor Co., Ltd – Complementary Silicon power transistors (10A / 60V / 75W)

SEMICONDUCTOR
MJE3055A(NPN)
MJE2955A(PNP) _RRooHHSS
Nell High Power Products
Complementary Silicon power transistors
(10A / 60V / 75W)
FEATURES
Designed for general-purpose switching
and amplifier applications.
DC current gain specified to 10A
High current gain-Band width product:
f_T = 2 MHz (Min.) @ l_C = 0.5 Adc
Excellent safe operating area
DESCRIPTION
The MJE3055A is a silicon epitaxial-base planar
NPN transistor in TO-220AB package.
lt is intended for use in general-purpose amplifier
and switding applications.
The complementary PNP type is MJE2955A.
1
2
3
TO-220AB
INTERNAL SCHEMATIC DIAGRAM
C (2)
(1)
B
(3)
E
MJE3055A(NPN)
C (2)
(1)
B
(3)
E
MJE2955A(PNP)
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
V_CBO
Collector to base voltage (I_E = 0)
V_CEO
Collector to emitter voltage (I_B = 0)
V_EBO
Emitter to base voltage
I_C
Collector current
I_B
Base current
Total power dissipation
P_C
Derate above 25ºC
T_C= 25°C
T_j
Junction temperature
T_stg
Storage temperature
*For PNP types voltage and current values are negative.
VALUE
70
60
5.0
10
6
75
0.6
150
-55 to 150
UNIT
V
A
W
W/ºC
ºC
THERMAL CHARACTERISTICS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
R_th(j-c)
Maximum thermal resistance, junction to case
VALUE
1.70
UNIT
ºC/W
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