IRF13N50 Datasheet, PDF (2/7 Pages) Nell Semiconductor Co., Ltd – N-Channel Power MOSFET

SEMICONDUCTOR
THERMAL RESISTANCE
SYMBOL
R_th(j-c)
R_th(c-s)
R_th(j-a)
PARAMETER
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Thermal resistance, junction to ambient
IRF13N50 Series RRooHHSS
Nell High Power Products
Min.
Typ.
0.5
Max. UNIT
0.50
ºC/W
62
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
STATIC
V_(BR)DSS
Drain to source breakdown voltage
V_GS = 0V, I_D = 250µA
500
▲ ▲ ^V(BR)DSS^{/ T}J ^{Breakdown voltage temperature coefficient I}D ^{= 1mA, referenced to 25°C}
I_DSS
Drain to source leakage current
V_DS=500V, V_GS=0V
V_DS=400V, V_GS=0V
T_C = 25°C
T_C=125°C
I_GSS
R_DS(ON)
Gate to source forward leakage current
Gate to source reverse leakage current
Static drain to source on-state resistance
V_GS = 30V, V_DS = 0V
V_GS = -30V, V_DS = 0V
V_GS = 10V, l_D = 8.4A (Note 1)
V_GS(TH)
g_fS
Gate threshold voltage
Forward transconductance
V_GS=V_DS, I_D=250μA
2
V_DS=50V, I_D=8.4A
8.1
DYNAMIC
C_ISS
Input capacitance
C_OSS
Output capacitance
V_DS = 25V, V_GS = 0V, f =1MHz
C_RSS
Reverse transfer capacitance
C_OSS
Output capacitance
V_DS = 1.0V, f =1.0MHz
V_GS = 0V V_DS = 400V, f =1.0MHz
C_OSS eff.
t_d(ON)
t_r
t_d(OFF)
Effective output capacitance (Note 2)
Turn-on delay time
Rise time
Turn-off delay time
V_DS = 0 to 400V
V_DD = 250V, I_D = 14A, R_G = 7.5Ω,
V_GS = 10V, (Note 1)
t_f
Fall time
Q_G
Total gate charge
Q_GS
Q_GD
Gate to source charge
Gate to drain charge (Miller charge)
V_DS = 400V, V_GS = 10V, I_D = 14A
Typ.
0.55
1910
290
11
2730
82
160
15
39
39
31
Max. UNIT
25
250
100
-100
0.45
4
V
V/ºC
μA
nA
Ω
V
S
pF
ns
81
20 nC
36
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
V_SD
I_s(I_SD)
Diode forward voltage
Continuous source to drain current
I_SD = 14A, V_GS = 0V
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
1.5
V
14
I_SM
Pulsed source current
G
(Gate)
A
56
t_rr
Q_rr
I_RRM
t_ON
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Forward turn-on time
S (Source)
I_SD = 14A, V_GS = 0V,
dI_F/dt = 100A/µs
370 550
ns
4.4 6.5 μC
21
31
A
Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
2. C_oss eff. is a fixed capacitance that gives the same charging time as Coss while V_DS is rising from 0 to 80% V_DS
www.nellsemi.com
Page 2 of 7