IRF13N50 Datasheet, PDF (1/7 Pages) Nell Semiconductor Co., Ltd – N-Channel Power MOSFET

SEMICONDUCTOR
IRF13N50 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(14A, 500Volts)
DESCRIPTION
The Nell IRF13N50 are N-channel enhancement mode
silicon gate power field effect transistors.
They are designed, tested and guaranteed to withstand
level of energy in breakdown avalanche made of operation.
They are designed as an extremely efficient and reliable
device for use in a wide variety of applications such as
SMPS, UPS, convertors, motor drivers and drivers for high
power bipolar switching transistors requiring high speed
and low gate drive power.
These transistors can be operated directly from
integrated circuits.
D
G
DS
TO-220AB
(IRF13N50A)
D (Drain)
FEATURES
R_DS(ON) = 0.45Ω @ V_GS = 10V
Ultra low gate charge(81nC max.)
Low reverse transfer capacitance
(C_RSS = 11pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
G
(Gate)
S (Source)
PRODUCT SUMMARY
I_D (A)
V_DSS (V)
R_DS(ON) (Ω)
Q_G(nC) max.
14
500
0.45 @ V_GS = 10V
81
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
V_DSS
V_DGR
V_GS
I_D
I_DM
Drain to Source voltage(Note 1)
Drain to Gate voltage
Gate to Source voltage
Continuous Drain Current
Pulsed Drain current (Note 1)
T_J=25°C to 150°C
R_GS=20KΩ
V_GS=10V, T_C=25°C
V_GS=10V, T_C=100°C
I_AR
E_AR
E_AS
dv/dt
Repetitive avalanche current (Note 1)
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy (Note 2)
Peak diode recovery dv/dt(Note 3)
I_AR=14A, R_GS=50Ω, V_GS=10V
I_AS=14A, L=5.7mH
Total power dissipation
P_D
Derating factor above 25°C
T_C=25°C
T_J
Operation junction temperature
T_STG
Storage temperature
T_L
Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
VALUE
500
500
±30
14
9.1
56
14
25
560
9.2
250
1.9
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
mJ
V /ns
W
W /°C
ºC
lbf.in (N.m)
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.V_DD=50V, L=5.7mH, I_AS=14A, R_G=25Ω, dV/dt=7.6 V/ns, starting T_J=25˚C
3.I_SD ≤ 14A, di/dt ≤ 250A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C.
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