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| 2SK2837 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND MOTOR DRIVE APPLICATIONS) | |||
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SEMICONDUCTOR
2SK2837 Series RRooHHSS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
Rth(c-s)
Rth(j-a)
PARAMETER
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Thermal resistance, junction to ambient
Min.
Typ.
0.30
Max.
0.83
50
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
STATIC
V(BR)DSS
â² â² V(BR)DSS/ TJ
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
IDSS
Drain to source leakage current
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
RDS(ON)
VGS(TH)
gfS
Static drain to source on-state resistance
Gate threshold voltage
Forward transconductance
DYNAMIC
CISS
COSS
Input capacitance
Output capacitance
CRSS
td(ON)
Reverse transfer capacitance
Turn-on delay time
tr
Rise time
td(OFF)
Turn-off delay time
tf
Fall time
QG
Total gate charge
QGS
Gate to source charge
QGD
Gate to drain charge (Miller charge)
LD
Internal drain inductance
LS
Internal source inductance
ID = 10mA, VGS = 0V
ID = 10mA, VDS = VGS
VDS=500V, VGS=0V TC = 25°C
VDS=400V, VGS=0V TC=125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
lD = 10.0A, VGS = 10V
VGS=VDS=10V, ID=1mA
VDS=10V, ID=10A
VDS = 10V, VGS = 0V, f =1MHz
VDD = 200V, VGS = 10V
ID = 10A, RG=50Ω, RD = 20Ω,
(Note 1,2)
VDD = 400V, VGS = 10V,
ID =6A (Note 1,2)
Between lead, 6mm(0.25â) from
package and center of die contact
Min.
500
2.0
10.0
Typ.
0.63
0.21
17.0
3720
1165
340
30
70
50
290
80
48
32
5
13
Max. UNIT
50.0
500
10
-10
0.27
4.0
V
V/ºC
μA
μA
Ω
V
S
pF
ns
nC
nH
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD
Is(ISD)
Diode forward voltage
Continuous source to drain current
ISD = 20A, VGS = 0V
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
1.7
V
20
ISM
Pulsed source current
G
(Gate)
A
80
trr
Reverse recovery time
Qrr
Reverse recovery charge
Note: 1. Pulse test: Pulse width ⤠10μs, duty cycle ⤠1%.
2. Essentially independent of operating temperature.
ISD = 20A, VGS = 0V,
dIF/dt = 100A/µs
S (Source)
540
ns
5.4
μC
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