2SK2837 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND MOTOR DRIVE APPLICATIONS)

SEMICONDUCTOR
2SK2837 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(20A, 500Volts)
DESCRIPTION
The Nell 2SK2837 is a three-terminal silicon device with
current conduction capability of 20A, fast switching speed,
low on-state resistance, breakdown voltage rating of 500V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such as switched
mode power supplies, DC to DC converters, motor control
circuits, UPS and general purpose switching applications.
D
G
D
S
TO-3PB
FEATURES
R_DS(ON) = 0.21Ω @ V_GS = 10V
Ultra low gate charge(80nC typical)
Low reverse transfer capacitance
(C_RSS = 340pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D (Drain)
G
(Gate)
S (Source)
PRODUCT SUMMARY
I_D (A)
V_DSS (V)
R_DS(ON) (Ω)
Q_G(nC) max.
20
500
0.21 @ V_GS = 10V
80
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
V_DSS
V_DGR
Drain to Source voltage
Drain to Gate voltage
T_J=25°C to 150°C
R_GS=20KΩ
V_GS
Gate to Source voltage
I_D
Continuous Drain Current (V_GS = 10V)
T_C=25°C
T_C=100°C
I_DM
Pulsed Drain current(Note 1)
I_AR
Avalanche current(Note 1)
E_AR
Repetitive avalanche energy(Note 1)
l_AR=20A, R_GS=50Ω, V_GS=10V
E_AS
Single pulse avalanche energy(Note 2)
l_AS=20A, L=4.08mH
dv/dt
Peak diode recovery dv/dt(Note 3)
Total power dissipation
P_D
Derating factor above 25°C
T_C=25°C
TO-3PB
T_J
Operation junction temperature
T_STG
Storage temperature
T_L
Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.l_AS=20A, L=4.08mH, V_DD = 90V, R_G =25Ω, starting T_J =25°C.
3.I_SD ≤ 20A, di/dt ≤ 130A/µs, V_DD ≤ V_(BR)DSS, starting T_J =25°C.
VALUE
UNIT
500
500
V
±30
20
12.4
A
80
20
15
mJ
960
mJ
3.5
V /ns
150
W
1.2
W /°C
-55 to 150
-55 to 150
ºC
300
10 (1.1)
lbf.in (N.m)
www.nellsemi.com
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