4PT06AI-S Datasheet, PDF (1/6 Pages) Nell Semiconductor Co., Ltd – Sensitive gate SCRs, 4A

SEMICONDUCTOR
4PT Series _RRooHHSS
Sensitive gate SCRs, 4A
Main Features
Symbol
I_T(RMS)
V_DRM/V_RRM
I_GT
Value
4
600 to 800
10 to 200
Unit
A
V
µA
2
1
23
TO-251 (I-PAK)
(4PTxxF)
2
12
3
TO-252 (D-PAK)
(4PTxxG)
DESCRIPTION
Thanks to highly sensitive triggering levels, the 4PT
series is suitable for all applications where the available
gate current is limited, such as motor control for hand
tools, kitchen aids, capacitive discharge ignitions,
overvoltage crowbar protection for low power supplies
among others.
Available in through-hole or surface-mount packages,
they provide an optimized performance in a limited
space area.
2
12 ₃
12 ₃
TO-220AB (Non-lnsulated) TO-220AB (lnsulated)
(4PTxxA)
(4PTxxAI)
2
(A2)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
I_T(RMS)
I_T(AV)
TO-251/TO-252/TO-220AB
TO-220AB insulated
TO-251/TO-252/TO-220AB
TO-220AB insulated
Tc=115°C
Tc=110°C
Tc=115°C
Tc=110°C
Non repetitive surge peak on-state
current (full cycle, T_j initial = 25°C)
I²t Value for fusing
F =50 Hz
I_TSM
F =60 Hz
I²t
t_p = 10 ms
t = 20 ms
t = 16.7 ms
Critical rate of rise of on-state current
I_G = 2xl_GT, t_r≤100ns
Peak gate current
Average gate power dissipation
dI/dt
I_GM
P_G(AV)
F = 60 Hz
T_p = 20 µs
T_j =125ºC
T_j = 125ºC
T_j = 125ºC
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
V_DRM
V_RRM
T_stg
T_j =125ºC
Operating junction temperature range
T_j
VALUE
4
2.5
30
33
4.5
50
1.2
0.2
600 and 800
- 40 to + 150
- 40 to + 125
UNIT
A
A
A
A²s
A/µs
A
W
V
ºC
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