MC-4516CD64ES Datasheet, PDF (8/16 Pages) NEC – 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM

MC-4516CD64ES, 4516CD64PS
Synchronous Characteristics
Parameter
Symbol
Clock cycle time
/CAS latency = 3
/CAS latency = 2
Access time from CLK
/CAS latency = 3
/CAS latency = 2
CLK high level width
CLK low level width
Data-out hold time
Data-out low-impedance time
Data-out high-impedance time
/CAS latency = 3
/CAS latency = 2
Data-in setup time
Data-in hold time
Address setup time
Address hold time
CKE setup time
CKE hold time
CKE setup time (Power down exit)
Command (/CS0, /CS1, /RAS, /CAS, /WE,
DQMB0 - DQMB7) setup time
Command (/CS0, /CS1, /RAS, /CAS, /WE,
DQMB0 - DQMB7) hold time
5 Note 1. Output load
Output
tCK3
tCK2
tAC3
tAC2
tCH
tCL
tOH
tLZ
tHZ3
tHZ2
tDS
tDH
tAS
tAH
tCKS
tCKH
tCKSP
tCMS
tCMH
Z = 50 Ω
MIN.
10
15
3.5
3.5
3
0
3
3
2.5
1
2.5
1
2.5
1
2.5
2.5
1
- A10B
MAX.
(100 MHz)
(67 MHz)
7
8
7
8
50 pF
Unit
Note
ns
ns
ns
1
ns
1
ns
ns
ns
1
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Remark These specifications are applied to the monolithic device.
8
Data Sheet M13612EJ5V0DS00