MC-4516CD64ES Datasheet, PDF (5/16 Pages) NEC – 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM

MC-4516CD64ES, 4516CD64PS
Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, wait more than 100 µs and then, execute power on sequence and CBR (Auto) refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Voltage on power supply pin relative to GND
VCC
Voltage on input pin relative to GND
VT
Short circuit output current
IO
Power dissipation
PD
Operating ambient temperature
TA
Storage temperature
Tstg
–0.5 to +4.6
V
–0.5 to +4.6
V
50
mA
8
W
0 to +70
°C
–55 to +125
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply voltage
High level input voltage
Low level input voltage
Operating ambient temperature
Symbol
VCC
VIH
VIL
TA
Condition
MIN.
3.0
2.0
–0.3
0
TYP. MAX. Unit
3.3
3.6
V
VCC + 0.3 V
+ 0.8
V
70
°C
Capacitance (TA = 25 °C, f = 1 MHz)
Parameter
Input capacitance
Data input/output capacitance
Symbol
Test condition
MIN. TYP. MAX. Unit
CI1 A0 - A11, BA0(A13), BA1(A12),
/RAS, /CAS, /WE
CI2 CLK0, CLK1
60
pF
30
CI3 CKE0, CKE1
30
CI4 /CS0, /CS1
30
CI5 DQMB0 – DQMB7
20
CI/O DQ0 - DQ63
20
pF
Data Sheet M13612EJ5V0DS00
5