NESG2101M05 Datasheet, PDF (7/14 Pages) NEC – NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

TYPICAL PERFORMANCE CURVES (TA = 25°C)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 4 V
f = 2 GHz
25
20
MSG
MAG
15
10
|S21e|²
5
0
1
10
100
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
15 MSG
MAG
VCE = 4 V
f = 3 GHz
10
5
|S21e|²
0
-5
-10
1
10
100
Collector Current, IC (mA)
OUTPUT POWER, POWER GAIN, COLLECTOR
CURRENT, COLLECTOR EFFICIENCY
vs. INPUT POWER
25
120
VCE = 3.6 V, f = 2 GHz
Icq = 10 mA
20
100
GP
15
80
Pout
10
60
IC
5
40
ηC
0
20
-5
0
-15 -10
-5
0
5
10
15
Input Power, Pin (dBm)
NESG2101M05
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
20
15 MSG
MAG
VCE = 3 V
f = 3 GHz
10
|S21e|²
5
0
-5
-10
1
10
100
Collector Current, IC (mA)
OUTPUT POWER, POWER GAIN, COLLECTOR
CURRENT, COLLECTOR EFFICIENCY
vs. INPUT POWER
30
120
VCE = 3.6 V, f = 1 GHz
Icq = 10 mA
25
100
GP
20
80
Pout
15
60
IC
10
40
ηC
5
20
0
0
-20 -15 -10
-5
0
5
10
Input Power, Pin (dBm)
OUTPUT POWER, POWER GAIN, COLLECTOR
CURRENT, COLLECTOR EFFICIENCY
vs. INPUT POWER
25
120
VCE = 3.6 V, f = 3 GHz
Icq = 10 mA
20
100
15
80
GP
10
60
Pout
5
40
IC
0
20
ηC
-5
-15 -10
-5
0
0
5
10
15
Input Power, Pin (dBm)