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NESG2101M05 Datasheet, PDF (1/14 Pages) NEC – NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR | |||
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NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
NESG2101M05
FEATURES
⢠HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
⢠HIGH OUTPUT POWER:
P1dB = 21 dBm at 2 GHz
⢠LOW NOISE FIGURE:
NF = 0.9 dBm at 2 GHz
⢠HIGH MAXIMUM STABLE POWER GAIN:
MSG = 17 dB at 2 GHz
⢠LOW PROFILE M05 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
M05
DESCRIPTION
NEC's NESG2101M05 is fabricated using NEC s high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise ampliï¬ers,
medium power ampliï¬ers, and oscillators
NEC slow proï¬le, ï¬at lead style M05 Package provides high
frequency performance for compact wireless designs.
NESG2101M05
M05
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
P1dB
Output Power at 1 dB Compression Point
VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz
dBm
21
GL
Linear Gain, VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz
dB
15
NF
Noise Figure at VCE = 2 V, IC = 10 mA, f = 2 GHz,
dB
ZS = ZSOPT, ZL = ZLOPT
0.9
1.2
Ga
Associated Gain at VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
11.0
13.0
NF
Noise Figure at VCE = 2 V, IC = 7mA, f = 1 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
0.6
Ga
Associated Gain at VCE = 2 V, IC = 7 mA, f = 1 GHz,
dB
ZS = ZSOPT, ZL = ZLOPT
19.0
MSG
Maximum Stable Gain1 at VCE = 3 V, IC = 50 mA, f = 2 GHz
dB
14.5
17.0
|S21E|2
Insertion Power Gain at VCE = 3 V, IC = 50 mA, f = 2 GHz
dB
11.5
13.5
fT
Gain Bandwidth Product at VCE = 3 V, IC = 50 mA, f = 2 GHz
GHz
14
17
Cre
Reverse Transfer Capacitance2 at VCB = 2 V, IC = 0 mA, f = 1 MHz
pF
0.4
0.5
ICBO
Collector Cutoff Current at VCB = 5V, IE = 0
nA
100
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
100
hFE
DC Current Gain3 at VCE = 2 V, IC = 15 mA
130
190
260
Notes:
1. MSG = S21
S12
2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
the guard pin.
3. Pulsed measurement, pulse width ⤠350 µs, duty cycle ⤠2 %.
California Eastern Laboratories
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