2SJ606 Datasheet, PDF (7/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

5 _{PACKAGE DRAWINGS (Unit: mm)}
1) TO-220AB (MP-25)
10.6 MAX.
10.0 TYP.
φ 3.6±0.2
4.8 MAX.
1.3±0.2
4
123
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
3) TO-263 (MP-25ZJ)
10 TYP.
4
4.8 MAX.
1.3±0.2
2SJ606
2) TO-262 (MP-25 Fin Cut)
10 TYP.
4.8 MAX.
1.3±0.2
4
123
1.3±0.2
0.75±0.3
2.54 TYP.
0.5±0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
4) TO-220SMD (MP-25Z) ^Note
10 TYP.
4
4.8 MAX.
1.3±0.2
123
1.4±0.2
0.7±0.2
2.54 TYP.
2.54 TYP⁰. ^{.5R0T.8YRP.TYP.}
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
123
1.4±0.2
0.75±0.3
2.54 TYP.
2.54 TYP⁰.^{.50R.8TRYPT.YP.}
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Note This package is produced only in Japan.
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Data Sheet D14654EJ3V0DS
7