2SJ606 Datasheet, PDF (1/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ606
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ606 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 15 mΩ MAX. (VGS = −10 V, ID = −42 A)
RDS(on)2 = 23 mΩ MAX. (VGS = −4.0 V, ID = −42 A)
• Low input capacitance:
Ciss = 4800 pF TYP. (VDS = −10 V, VGS = 0 V)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−60
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
Total Power Dissipation (TC = 25°C)
VGSS
ID(DC)
ID(pulse)
PT
m 20
m 83
m 300
120
Total Power Dissipation (TA = 25°C)
PT
1.5
Channel Temperature
Tch
150
Storage Temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Tstg −55 to +150
IAS
−40
EAS
160
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ606
TO-220AB
2SJ606-S
TO-262
2SJ606-ZJ
2SJ606-Z
TO-263
TO-220SMD ^Note
Note TO-220SMD package is produced only in
Japan
(TO-220AB)
V
V
A
A
W
W
(TO-262)
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14654EJ3V0DS00 (3rd edition)
Date Published July 2002 NS CP(K)
The mark 5 shows major revised points.
©
Printed in Japan
2000, 2001