UPA507TE Datasheet, PDF (6/8 Pages) NEC – P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
200
ID = −1.0 A
Pulsed
150
VGS = −1.8 V
−2.5 V
−4.5 V
100
50
0
- 50
0
50
100
150
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
100
td(off)
tf
10
td(on)
1
- 0.1
tr
VDD = −10 V
VGS = −4.0 V
RG = 10 Ω
-1
- 10
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
Pulsed
1
VGS = 0 V
0.1
0.01
0.4
0.6
0.8
1
1.2
VF(S-D) - Source to Drain Voltage - V
µ PA507TE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
VGS = 0 V
f = 1.0 MHz
Ciss
100
Coss
Crss
10
- 0.01
- 0.1
-1
- 10
VDS - Drain to Source Voltage - V
- 100
DYNAMIC INPUT CHARACTERISTICS
-4
ID = −1.0 A
-3
VDD = −4.0 V
−10 V
−16 V
-2
-1
0
0
1
2
3
4
5
QG - Gate Change - nC
6
Data Sheet G16626EJ1V1DS