UPA507TE Datasheet, PDF (1/8 Pages) NEC – P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING

DATA SHEET
MOS FET WITH SCHOTTKY BARRIER DIODE
µ PA507TE
P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE
FOR SWITCHING
DESCRIPTION
The µ PA507TE is a switching device, which can be driven
directly by a 1.8 V power source.
This device incorporates a MOS FET, which features a low
on-state resistance and excellent switching characteristics and
a low forward voltage Schottky barrier diode, and is suitable
for applications such as DC/DC converter of portable machine
and so on.
FEATURES
• 1.8 V drive available (MOS FET)
• Low on-state resistance (MOS FET)
RDS(on)1 = 68 mΩ TYP. (VGS = −4.5 V, ID = −1.0 A)
RDS(on)2 = 84 mΩ TYP. (VGS = −2.5 V, ID = −1.0 A)
RDS(on)3 = 109 mΩ TYP. (VGS = −1.8 V, ID = −1.0 A)
• Low forward voltage (Schottky barrier diode)
VF = 0.35 V TYP. (IF = 1.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA507TE
SC-95_5p (Mini Mold Thin Type)
Marking: ZA
PACKAGE DRAWING (Unit: mm)
0.32
+0.1
–0.05
0.16^{+–00..016}
5
4
1
2
3
0.95 0.95
1.9
2.9 ±0.2
0 to 0.1
0.65
0.9 to 1.1
★ PIN CONNECTION (Top View)
5
4
1: Gate
2: Source
3: Anode
4: Cathode
5: Drain
1
2
3
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD ± 100 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16626EJ1V1DS00 (1st edition)
Date Published December 2003 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
2003