NP84N055EHE Datasheet, PDF (6/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP84N055EHE, NP84N055KHE, NP84N055CHE, NP84N055DHE, NP84N055MHE, NP84N055NHE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
12
Pulsed
10
VGS = 10 V
8
6
4
2
0
ID = 42 A
−50
0
50 100 150
Tch - Channel Temperature - °C
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000 _Pulsed
100 VGS = 10 V
0V
10
1
0.1
0
0.5
1.0
1.5
VF(S-D) - Source to Drain Voltage - V
100000
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
100
0.1
Coss
Crss
1
10
100
VDS - Drain to Source Voltage - V
Figure15. SWITCHING CHARACTERISTICS
1000
tf
100
tr
10
td(off)
td(on)
VDD = 28 V
VGS = 10 V
1 ^{RG = 1 Ω}
0.1
1
10
100
ID - Drain Current - A
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
di/dt = 100 A/μs
VGS = 0 V
100
10
1
0.1
1.0
10
100
IF - Diode Forward Current - A
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
10
40
VDD = 44 V
VGS
8
28 V
11 V
30
6
20
4
10
2
VDS
ID = 84 A
0
0
0 20 40 60 80 100 120
QG - Gate Charge - nC
6
Data Sheet D14099EJ6V0DS