NP84N055EHE Datasheet, PDF (4/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP84N055EHE, NP84N055KHE, NP84N055CHE, NP84N055DHE, NP84N055MHE, NP84N055NHE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
280
240
200
160
120
80
40
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
100
10
R^D_(V^{S(GonS) =Lim10iteVd)}
ID(pulse)
PW
ID(DC)
LiPmoitweder
DC ^{1 ms}
Dissipation
100 _μs
= _{10 μs}
1
TC = 25°C
0.1 ^{Single Pulse}
0.1
1
10
100
VDS - Drain to Source Voltage - V
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
450
441 mJ
400
350
313 mJ
300
250
IAS = 21 A
56 A
200
84 A
150
100 _{70 mJ}
50
0
25 50 75 100 125 150 175
Starting Tch - Starting Channel Temperature - °C
1000
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3°C/W
10
1
0.1
0.01
10 μ 100 μ
1m
10 m 100 m
1
PW - Pulse Width - s
Rth(ch-C) = 0.75°C/W
Single Pulse
10
100 1000
4
Data Sheet D14099EJ6V0DS