NP82N055ELE Datasheet, PDF (6/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP82N055ELE, NP82N055KLE, NP82N055CLE, NP82N055DLE, NP82N055MLE, NP82N055NLE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
18
Pulsed
16
14
12
VGS = 4.5 V
5.0 V
10
10 V
8
6
4
2
ID = 41 A
0
−50
0
50 100 150
Tch - Channel Temperature - °C
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100000
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
100
0.1
Coss
Crss
1
10
100
VDS - Drain to Source Voltage - V
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
di/dt = 100 A/μs
VGS = 0 V
100
10
1
0.1
1.0
10
100
IF - Diode Forward Current - A
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000 _Pulsed
100
VGS = 10 V
0V
10
1
0.10
0.5
1.0
1.5
VF(S-D) - Source to Drain Voltage - V
Figure15. SWITCHING CHARACTERISTICS
1000
tf
100
td(off)
td(on)
10 ^tr
VDD = 28 V
VGS = 10 V
1 ^{RG = 1 Ω}
0.1
1
10
100
ID - Drain Current - A
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
16
70
14
60
VDD = 44 V
12
28 V
50
11 V
10
40
8
VGS
30
6
20
4
VDS
10
2
ID = 82 A
0
0
0 10 20 30 40 50 60 70 80
QG - Gate Charge - nC
6
Data Sheet D14098EJ6V0DS