NP82N055ELE Datasheet, PDF (5/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP82N055ELE, NP82N055KLE, NP82N055CLE, NP82N055DLE, NP82N055MLE, NP82N055NLE
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000 _Pulsed
100
TA = 175°C
10
150°C
75°C
25°C
1
−55°C
0.1
1
2
3
4
5
6
VGS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 _{VDS = 10 V}
Pulsed
10
TA = −55°C
25°C
75°C
1
175°C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
20
Pulsed
VGS = 4.5 V
5.0 V
10
10 V
0
1
10
100
1000
ID - Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
300
VGS = 10 V
250
200
5.0 V
150
4.5 V
100
50
Pulsed
0
0
1
2
3
4
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
10
ID = 41 A
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
VDS = VGS
ID = 250 μA
2.5
2.0
1.5
1.0
0.5
0
−50
0
50 100 150
Tch - Channel Temperature - °C
Data Sheet D14098EJ6V0DS
5