NP80N055EHE Datasheet, PDF (6/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP80N055EHE, NP80N055KHE, NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
24
Pulsed
20
16
12
VGS = 10 V
8
4
0
ID = 40 A
−50
0
50 100 150
Tch - Channel Temperature - °C
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100
VGS = 10 V
0V
10
1
0.10
0.5
1.0
1.5
VF(S-D) - Source to Drain Voltage - V
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
Ciss
1000
100
Coss
Crss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
Figure15. SWITCHING CHARACTERISTICS
1000
tf
100
tr
10
td(off)
td(on)
VDD = 28 V
VGS = 10 V
1 ^{RG = 1 Ω}
0.1
1
10
100
ID - Drain Current - A
1000
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/μs
VGS = 0 V
100
10
1
0.1
1.0
10
100
IF - Diode Forward Current - A
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
16
14
60
12
VDD = 44 V
28 V
VGS
10
40
11 V
8
6
20
4
VDS
2
ID = 80 A
0
0
10
20
30
40
QG - Gate Charge - nC
6
Data Sheet D14096EJ7V0DS