NP80N055EHE Datasheet, PDF (5/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP80N055EHE, NP80N055KHE, NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000 _Pulsed
100
TA = −40°C
25°C
75°C
10
150°C
175°C
1
0.1
1
VDS = 10 V
2
3
4
5
6
VGS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 _{VDS =10V}
Pulsed
10
TA = 175°C
1
75°C
25°C
−25°C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30
Pulsed
20
10
VGS = 10 V
0
1
10
100
1000
ID - Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
160
120
80
40
0
0
VGS =10 V
Pulsed
1
2
3
4
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
Pulsed
40
30
20
10
ID = 40 A
0
0 2 4 6 8 10 12 14 16 18
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = VGS
4.0
ID = 250 μA
3.0
2.0
1.0
0
−50
0
50
100 150
Tch - Channel Temperature - °C
Data Sheet D14096EJ7V0DS
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