NP80N04EHE Datasheet, PDF (6/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Pulsed
16
12
VGS = 10 V
8
4
ID = 40 A
0
−50
0
50 100 150
Tch - Channel Temperature - °C
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000 _Pulsed
VGS = 10 V
100
0V
10
1
0.10
0.5
1.0
1.5
VF(S-D) - Source to Drain Voltage - V
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
Ciss
1000
Coss
Crss
100
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
Figure15. SWITCHING CHARACTERISTICS
1000
100
10
tf
td(on)
tr
td(off)
VDD = 20 V
VGS = 10 V
1 ^{RG = 1 Ω}
0.1
1
10
100
ID - Drain Current - A
1000
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/μs
VGS = 0 V
100
10
1
0.1
1.0
10
100
IF - Diode Forward Curren - A
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
16
14
60
12
VDD = 32 V
20 V
VGS
10
40
8V
8
6
20
4
VDS
2
ID = 80 A
0
0
10
20
30
40
QG - Gate Charge - nC
6
Data Sheet D14239EJ7V0DS