NP80N04EHE Datasheet, PDF (4/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP80N04EHE, NP80N04KHE, NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0
25 50 75 100 125 150 175 200
TC - Case Temperature - °C
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
100
10
R^D_(V^{S(oGnS) L=im10iteVd)}
ID(pulse)
ID(DC)
LimPoitweedr
DC
Dissipation
1 _ms
PW ₌
100 _μs
10
μ_s
1
TC = 25°C
Single pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
180
169 mJ
160
140
120
100 _{96 mJ}
80
60
IAS = 13 A
31 A
52 A
40
20
2.7 mJ
0
25 50
75 100 125 150 175
Starting Tch - Starting Channel Temperature - °C
1000
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3°C/W
10
1
Rth(ch-C) = 1.25°C/W
0.1
0.01
10 μ 100 μ
1m
10 m 100 m
1
PW - Pulse Width - s
Single pulse
10
100
1000
4
Data Sheet D14239EJ7V0DS