NP80N03ELE_07 Datasheet, PDF (6/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP80N03ELE, NP80N03KLE, NP80N03CLE, NP80N03DLE, NP80N03MLE, NP80N03NLE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
12 _Pulsed
10 VGS = 4.5 V
5V
10 V
8
6
4
2
0
ID = 40 A
−50
0
50 100 150
Tch - Channel Temperature - °C
10000
1000
100
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100 VGS = 10 V
10
0V
1
0.10
0.5
1.0
1.5
VF(S-D) - Source to Drain Voltage - V
Figure15. SWITCHING CHARACTERISTICS
1000
tf
100
td(off)
td(on)
10 tr
VDD = 15 V
VGS = 10 V
1 ^{RG = 1 Ω}
0.1
1
10
100
ID - Drain Current - A
1000
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
di/dt = 100 A/μs
VGS = 0 V
100
10
1
0.1
1
10
100
IF - Diode Forward Current - A
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
16
35
30
25
VDD = 24 V
15 V
20
6V
14
VGS
12
10
8
15
6
10
4
VDS
5
2
ID = 80 A
0
0
0 10 20 30 40 50 60 70 80
QG - Gate Charge - nC
6
Data Sheet D14032EJ5V0DS