NP80N03ELE_07 Datasheet, PDF (4/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP80N03ELE, NP80N03KLE, NP80N03CLE, NP80N03DLE, NP80N03MLE, NP80N03NLE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
100
10
R^D_(V^{S(GonS) =Lim10iteVd)}
ID(DC)
ID(pulse)
100
PW
μ_s
=
10
μ_s
LimPoitweedr
DC
Dissipation
1 _ms
1
TC = 25°C
Single pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
450
400 ^{400 mJ}
350
300
250
200
160 mJ
150
IAS = 9 A
40 A
50 A
100
50
2.5 mJ
0
25 50 75
100 125 150 175
Starting Tch - Starting Channel Temperature - °C
1000
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3°C/W
10
1
Rth(ch-C) = 1.25°C/W
0.1
0.01
10 μ
100μ 1 m
10 m 100 m
1
PW - Pulse Width - s
Single pulse
10
100 1000
4
Data Sheet D14032EJ5V0DS