NP40N055ELE Datasheet, PDF (6/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP40N055ELE, NP40N055KLE, NP40N055CLE, NP40N055DLE, NP40N055MLE, NP40N055NLE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
50
Pulsed
VGS = 4.5 V
40
5.0 V
10 V
30
20
10
ID = 20 A
0
−50
0
50 100 150
Tch - Channel Temperature - °C
Figure14. CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
Ciss
1000
100
Coss
Crss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
di/dt = 100 A/μs
VGS = 0 V
100
10
1
0.1
1
10
100
IF - Diode Forward Current - A
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100
VGS = 10 V
0V
10
1
0.1
0
0.4 0.8
1.2
1.6 2.0
VF(S-D) - Source to Drain Voltage - V
Figure15. SWITCHING CHARACTERISTICS
1000
tf
100
10 _tr
td(off)
td(on)
VDD = 28 V
VGS = 10 V
1 ^{RG = 1 Ω}
0.1
1
10
100
ID - Drain Current - A
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
16
14
60
VDD = 44 V
28 V
40
11 V
12
VGS
10
8
6
20
4
2
VDS
0
ID = 40 A
0
10
20
30
40
QG - Gate Charge - nC
6
Data Sheet D14093EJ7V0DS