NP40N055ELE Datasheet, PDF (5/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP40N055ELE, NP40N055KLE, NP40N055CLE, NP40N055DLE, NP40N055MLE, NP40N055NLE
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000 _Pulsed
100
10
TA = −55°C
25°C
75°C
150°C
1
175°C
0.1
1
VDS = 10 V
2
3
4
5
6
VGS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 _{VDS = 10 V}
Pulsed
10
TA = 175°C
1
75°C
25°C
−55°C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
50
Pulsed
40
VGS = 10 V
30
5.0 V
4.5 V
20
10
0
0.1
1
10
100
ID - Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
120
100
80
60
40
20
0
0
VGS = 10 V
5.0 V
4.5 V
Pulsed
1
2
3
4
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
50
Pulsed
40
30
20
ID = 20 A
10
0
0 2 4 6 8 10 12 14 16 18
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
3.0
VDS = VGS
ID = 250 μA
2.5
2.0
1.5
1.0
0.5
0
−50
0
50
100 150
Tch - Channel Temperature - °C
Data Sheet D14093EJ7V0DS
5