UPA1811 Datasheet, PDF (5/8 Pages) NEC – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

µ PA1811
1000
SWITCHING CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
tr
tf
100
td(off)
10
−0.1
td(on)
VDD = −10 V
VGS(on) = −4.0 V
RG = 5 Ω
−1
−10
ID - Drain Current - A
DYNAMIC INPUT CHARACTERISTICS
−4
ID = −4.0 A
−3
VDD = −10 V
−2
10
1
0.1
0.4
VGS = 0 V
0.6
0.8
1
1.2
VF(S-D) - Source to Drain Voltage - V
−1
0
0
10
20
30
40
Qg - Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Mounted on ceramic
substrate of 5000 mm² x 1.1 mm
Single Pulse
100
62.5˚C/W
10
1
0.1
0.001
0.01
0.1
1
10
PW - Pulse Width - s
100
1000
Data Sheet D11820EJ1V0DS00
5