UPA1811 Datasheet, PDF (2/8 Pages) NEC – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = –20 V, VGS = 0 V
Gate Leakage Current
• Gate Cut-off Voltage
• Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
VGS = ±12 V, VDS = 0 V
VDS = –10 V, ID = –1 mA
VDS = –10 V, ID = –2.0 A
Drain to Source On-state Resistance
RDS(on)1 VGS = –4.5 V, ID = –2.0 A
RDS(on)2 VGS = –4.0 V, ID = –2.0 A
RDS(on)3 VGS = –2.5 V, ID = –2.0 A
Input Capacitance
Ciss
VDS = –10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = –10 V
Rise Time
tr
ID = –2.0 A
Turn-off Delay Time
td(off)
VGS(on) = –4.0 V
Fall Time
tf
RG = 5 Ω
Total Gate Charge
QG
VDD = –10 V
Gate to Source Charge
QGS ID = –4.0 A
Gate to Drain Charge
QGD VGS = –4.0 V
Diode Forward Voltage
VF(S-D) IF = 4.0 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 4.0 A, VGS = 0 V
Qrr
di/dt = 100 A/µS
µ PA1811
MIN. TYP. MAX. UNIT
–10 µA
±10 µA
–0.5 –0.9 –1.5 V
2.5 6.8
S
42 75 mΩ
46 80 mΩ
73 120 mΩ
1160
pF
680
pF
210
pF
40
ns
100
ns
90
ns
60
ns
36
nC
5
nC
16
nC
0.74
V
77
ns
69
nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG.
VGS (−)
0
τ
τ = 1µs
Duty Cycle ≤ 1 %
RL
VDD
VGS (−)
VGS
Wave Form
010 ^%
VGS(on) ^{90 %}
ID (−)
90 %
ID
ID
0 ^{10 %}
Wave Form
90 %
10 %
td(on) tr td(off) tf
ton
toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = −2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D11820EJ1V0DS00