NP88N055EHE Datasheet, PDF (5/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP88N055EHE, NP88N055KHE, NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE
Figure6. FORWARD TRANSFER CHARACTERISTICS
100 _Pulsed
10
TA = −25°C
25°C
75°C
1
150°C
175°C
0.1
0.01 ₂
VDS = 10 V
3
4
5
6
7
VGS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 _{VDS = 10 V}
Pulsed
10
TA = 175°C
1
75°C
25°C
−25°C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
15
Pulsed
10
5
VGS = 10 V
0
1
10
100
1000
ID - Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
500
400
300
VGS = 10 V
200
100
Pulsed
0
0.5
1.0
1.5
2.0
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
Pulsed
5
ID = 44 A
0
0 2 4 6 8 10 12 16 18
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = VGS
4.0
ID = 250 μA
3.0
2.0
1.0
0
−50
0
50
100 150
Tch - Channel Temperature - °C
Data Sheet D14148EJ8V0DS
5