NP88N055EHE Datasheet, PDF (4/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP88N055EHE, NP88N055KHE, NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
350
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - °C
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
100
10
ID(pulse)
R(^D_V^{SG(oSn) =Li1m0itVed)}
ID(DC)
LimPoitweder
10 _ms
DC
Dissipation
1 _ms
PW
100 _μs
=
10
μ_s
1
TC = 25°C
0.1 ^{Single Pulse}
0.1
1
10
100
VDS - Drain to Source Voltage - V
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
800
700
600
500
422 mJ
400
300
200
IAS = 65 A
88 A
100
15 mJ
0
25 50
75 100 125 150 175
Starting Tch - Starting Channel Temperature - °C
1000
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3°C/W
10
1
0.1
0.01
10 μ
100 μ 1 m
10 m 100 m
1
PW - Pulse Width - s
Rth(ch-C) = 0.52°C/W
Single Pulse
TC = 25°C
10
100 1 000
4
Data Sheet D14148EJ8V0DS