NP50P06KDG Datasheet, PDF (5/7 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
30
VGS = −4.5 V
20
10
0
-75
−10 V
ID = −25 A
Pulsed
-25 25 75 125 175 225
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
td(of f )
tf
td(on)
10
tr
VDD = −30 V
VGS = −10 V
RG = 0 Ω
1
-0.1
-1
-10
ID - Drain Current - A
-100
-100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
-10
VGS = −10 V
0V
-1
-0.1
-0.01
0
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
NP50P06KDG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
Coss
Crss
100
VGS = 0 V
f = 1 MHz
10
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-60
-12
-50
VDD = −48 V
-10
−30 V
-40
−12 V
-8
-30
-6
-20
VGS
-4
-10
0
0
VDS
20
40
-2
ID = −50 A
0
60
80 100
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = −100 A/μs
VGS = 0 V
1
-0.1
-1
-10
IF - Diode Forward Current - A
-100
Data Sheet D18689EJ3V0DS
5