NP50P06KDG Datasheet, PDF (4/7 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

-150
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-100
-50
VGS = −10 V
−4.5 V
Pulsed
0
0
-1
-2
-3
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
-3
-2.5
-2
-1.5
-1
-0.5 ^{VDS = −10 V}
ID = −1 mA
0
-75 -25 25
75 125 175 225
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
40
30
20
VGS = −4.5 V
10
0
-1
−10 V
Pulsed
-10
-100
ID - Drain Current - A
-1000
NP50P06KDG
FORWARD TRANSFER CHARACTERISTICS
-1000
-100
VDS = −10 V
Pulsed
-10
-1
-0.1
-0.01
-0.001
0
Tch = −55°C
−25°C
25°C
75°C
125°C
150°C
175°C
-1
-2
-3
-4
-5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Tch = −55°C
−25°C
25°C
10
75°C
125°C
1
150°C
175°C
VDS = −10 V
Pulsed
0.1
-0.1
-1
-10
ID - Drain Current - A
-100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
ID = −50 A
20
−25 A
−10 A
10
Pulsed
0
0
-5
-10
-15
-20
VGS - Gate to Source Voltage - V
4
Data Sheet D18689EJ3V0DS