NP48N055EHE Datasheet, PDF (5/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP48N055EHE, NP48N055KHE, NP48N055CHE, NP48N055DHE, NP48N055MHE, NP48N055NHE
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000 _Pulsed
100
10
1
0.1 ₂
TA = −40°C
25°C
75°C
150°C
175°C
3
4
5
6
7
VGS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
10
TA = 175°C
1
75°C
25°C
−40°C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
40
Pulsed
30
VGS = 10 V
20
10
0
1
10
100
1000
ID - Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
140
Pulsed
120
100
VGS = 10 V
80
60
40
20
0
0
1.0
2.0
3.0
4.0
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
40
Pulsed
35
30
25
20
15
ID = 24 A
10
5
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
VDS = VGS
4.0
ID = 250 μA
3.0
2.0
1.0
0
−50
0
50
100 150
Tch - Channel Temperature - °C
Data Sheet D14094EJ6V0DS
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