NP48N055EHE Datasheet, PDF (1/10 Pages) NEC – MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP48N055EHE, NP48N055KHE
NP48N055CHE, NP48N055DHE, NP48N055MHE, NP48N055NHE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R> ORDERING INFORMATION
PART NUMBER
NP48N055EHE-E1-AY ^{Note1, 2}
NP48N055EHE-E2-AY ^{Note1, 2}
NP48N055KHE-E1-AY ^Note1
NP48N055KHE-E2-AY ^Note1
NP48N055CHE-S12-AZ ^{Note1, 2}
NP48N055DHE-S12-AY ^{Note1, 2}
NP48N055MHE-S18-AY ^Note1
NP48N055NHE-S18-AY ^Note1
LEAD PLATING
Pure Sn (Tin)
Sn-Ag-Cu
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 17 mΩ MAX. (VGS = 10 V, ID = 24 A)
• Low input capacitance
Ciss = 1600 pF TYP.
• Built-in gate protection diode
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14094EJ6V0DS00 (6th edition)
Date Published October 2007 NS
1999, 2000, 2007
Printed in Japan
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