NE698M01 Datasheet, PDF (5/8 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION

TYPICAL SCATTERING PARAMETERS (TA = 25°C)
NE698M01
VCE = 2 V, Ic = 1 mA
FREQUENCY
S11
f (MHz)
100
250
400
600
800
1000
1200
1400
1600
1800
2000
2500
3000
3500
4000
4500
5000
MAG
0.963
0.962
0.953
0.934
0.907
0.874
0.838
0.799
0.758
0.715
0.668
0.587
0.533
0.518
0.532
0.561
0.592
ANG
-3.9
-10.0
-16.1
-24.2
-32.4
-40.6
-49.2
-57.6
-66.2
-75.3
-84.6
-107.1
-131.1
-154.4
-175.9
165.6
149.7
MAG
2.863
2.880
2.893
2.886
2.893
2.852
2.823
2.758
2.685
2.629
2.573
2.279
2.035
1.772
1.534
1.324
1.146
S21
ANG
171.7
167.7
161.3
152.6
143.7
134.7
126.0
117.5
108.9
100.5
92.0
72.5
54.6
38.0
23.4
10.7
-0.5
S12
MAG
ANG
0.006
82.8
0.015
80.1
0.024
75.5
0.035
68.8
0.045
61.8
0.054
55.1
0.061
48.8
0.066
42.6
0.070
36.6
0.071
31.1
0.071
26.1
0.063
17.7
0.050
19.5
0.042
38.7
0.052
63.3
0.077
72.0
0.108
71.1
MAG
0.987
0.989
0.984
0.973
0.957
0.938
0.919
0.897
0.875
0.853
0.834
0.797
0.780
0.785
0.800
0.821
0.841
S22
ANG
-2.7
-8.2
-13.0
-19.5
-26.0
-32.5
-39.0
-45.5
-52.0
-58.4
-64.7
-80.0
-94.4
-107.6
-119.2
-129.3
-138.1
K
0.21
0.11
0.12
0.16
0.21
0.27
0.31
0.37
0.43
0.50
0.58
0.84
1.23
1.56
1.25
0.83
0.58
MAG¹
(dB)
26.7
22.8
20.8
19.2
18.1
17.3
16.7
16.2
15.9
15.7
15.6
15.6
13.2
11.9
11.7
12.3
10.3
Note:
1. Gain Calculations:
( ). MAG = ^|S21| K ± K ² - 1 When K ≤ 1, MAG is undefined and MSG values are used. MSG = ^|S21| , K = ^{1 + | ∆ | 2 - |S11| 2 - |S22| 2} , ∆ = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain