NE698M01 Datasheet, PDF (1/8 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION

PRELIMINARY DATA SHEET
NPN EPITAXIAL SILICON
TRANSISTOR FOR MICROWAVE NE698M01
HIGH-GAIN AMPLIFICATION
FEATURES
• HIGH fT:
17 GHz TYP at 2 V, 7 mA
• LOW NOISE FIGURE:
NF = 1.1 dB TYP at f = 2 GHz, 2 V, 1 mA
• HIGH GAIN:
|S21E|² = 15.5 dB TYP at f = 2 GHz
• 6 PIN SMALL MINI MOLD PACKAGE
• EXCELLENT LOW VOLTAGE,
LOW CURRENT PERFORMANCE
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M01
TOP VIEW
2.1 ± 0.1
1.25 ± 0.1
1
0.65
2.0 ± 0.2
1.3
2
3
6
0.2 (All Leads)
5
4
DESCRIPTION
The NE698M01 is an NPN high frequency silicon epitaxial
transistor (NE686) encapsulated in an ultra small 6 pin SOT-
363 package. Its four emitter pins decrease emitter inductance
resulting in 3 dB more gain compared to conventional SOT-23
and SOT-143 devices. The NE698M01 is ideal for LNA and
pre-driver applications up to 2.4 GHz where low cost, high gain,
low voltage and low current are prime considerations.
0.9 ± 0.1
0.7
0 ~ 0.1
PIN CONNECTIONS
1. Emitter 4. Emitter
2. Emitter 5. Emitter
3. Base
6. Collector
+0.10
0.15 _{- 0.05}
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Note: Pin 3 is identified with a circle on the bottom of the package.
PART NUMBER
PACKAGE OUTLINE
NE698M01
M01
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
ICBO
IEBO
hFE1
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current Gain at VCE = 2 V, IC = 7 mA
µA
µA
70
fT
CRE2
Gain Bandwidth Product at VCE = 2 V, IC=7mA, f = 2.0GHz GHz
Feedback Capacitance at VCB = 2 V, IE=0, f=1 MHz
pF
|S21E|² Insertion Power Gain at VCE = 2 V, IC = 7 mA, f = 2.0 GHz dB
13
NF
Noise Figure at VCE = 2 V, IC = 1 mA, f = 2.0 GHz
dB
TYP
17
0.1
15.5
1.1
MAX
0.1
0.1
140
0.15
1.8
Notes:
1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
California Eastern Laboratories