NE678M04 Datasheet, PDF (5/7 Pages) NEC – MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

NE678M04
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
j25
j100
j10
S22
0 10 25 50 100
S11
+135º
+180º
+90º
+45º
5 10 15 20
+0º
-j10
-j25
-j50
NE678M04
VC = 2 V, IC = 10 mA
FREQUENCY
S11
GHz
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.500
1.800
1.900
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
MAG
0.72
0.68
0.65
0.63
0.62
0.60
0.60
0.60
0.60
0.60
0.59
0.59
0.59
0.59
0.59
0.60
0.61
0.63
0.65
0.67
0.69
0.71
ANG
-45.97
-81.43
-106.66
-124.06
-136.69
-148.20
-155.78
-161.77
-167.38
-171.69
170.30
161.69
158.90
156.19
142.62
128.82
114.69
101.16
89.04
78.45
68.99
59.90
-j100
S21
MAG
ANG
23.42
19.17
15.41
12.56
10.53
8.85
7.72
6.86
6.15
5.59
3.81
3.21
3.05
2.90
2.35
1.97
1.69
1.47
1.29
1.15
1.02
0.92
152.40
132.28
118.19
108.21
100.63
94.98
89.80
85.45
81.38
77.66
61.44
52.84
50.05
47.32
33.99
21.32
9.12
-2.44
-13.44
-23.86
-33.79
-43.00
S12
MAG
0.02
0.04
0.05
0.05
0.06
0.06
0.06
0.06
0.07
0.07
0.08
0.09
0.09
0.09
0.11
0.13
0.14
0.16
0.18
0.19
0.21
0.23
ANG
65.62
52.02
42.17
37.11
33.66
32.53
31.81
31.70
31.29
31.31
33.17
33.52
33.69
33.45
32.55
29.86
26.40
21.89
16.66
10.92
4.77
-1.43
-135º
-45º
-90º
S22
MAG
ANG
0.90
-29.51
0.74
-51.31
0.61
-66.86
0.52
-77.84
0.46
-86.27
0.38
-92.24
0.36
-98.70
0.34
-102.52
0.33
-106.64
0.32
-110.16
0.31
-123.84
0.32
-130.08
0.32
-131.91
0.33
-133.96
0.36
-142.01
0.39
-149.47
0.43
-156.17
0.47
-163.41
0.50
-171.39
0.53
179.62
0.57
170.14
0.60
160.66
K
MAG¹
(dB)
0.10
29.97
0.18
26.71
0.26
24.93
0.34
23.61
0.42
22.62
0.56
21.75
0.62
21.00
0.68
20.32
0.74
19.72
0.79
19.17
1.00
16.81
1.07
13.98
1.10
13.41
1.11
12.93
1.14
11.02
1.15
9.63
1.12
8.62
1.07
7.95
1.03
7.59
0.98
7.69
0.94
6.86
0.92
6.09
Note:
1. Gain Calculations:
( ). MAG = ^|S21| K – K ² - 1 When K ≥ 1, MAG is undefined and MSG values are used. MSG = ^|S21| , K = ^{1 + | ∆ | 2 - |S11| 2 - |S22| 2} , ∆ = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain