2SK3668 Datasheet, PDF (5/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.4
VGS = 10 V
1.2 ^Pulsed
1
ID = 10 A
0.8
5.0 A
0.6
0.4
0.2
0
- 25
0
25 50 75 100 125 150
Tch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
td(off)
tf
td(on)
tr
VDD = 150 V
VGS = 10 V
RG = 10 Ω
1
0
0.1
1
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
10
VGS = 10 V
1
0V
0.1
0.01
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
2SK3668
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
100
Coss
10
VGS = 0
f = 1.0 MHz
1
0.01
0.1
1
Crss
10
100
1000
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
400
16
ID = 10 A
350
14
300
VDD = 320 V
12
200 V
250
100 V
10
200
8
VGS
150
6
100
4
50
VDS
2
0
0
0
5
10
15
20
25
30
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
10
1
0.1
di/dt = 100 A/µs
VGS = 0 V
1
10
100
IF - Diode Forward Current - A
Data Sheet D16547EJ2V0DS
5